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Anisotropic Plasma Etch

 

Process Probe 2130 Process Probe 2140

Process Probe 2130 (0°C to 130°C)

  • Characterize temperature uniformity with plasma on

  • Correlate temperature with bias potential

Process Probe 2140 (-60°C to 420°C)

  • Characterize temperature uniformity with plasma on

  • Correlate temperature with bias potential

 

Other Processes Supported
2130 APE
  PS w/BP
   
   
   
2140 APE
  LPCVD/SACVD
  PECVD
  PS w/BP
  PVD