Products
Process Probe 2140
| Temperature Range: | -60°C to 420°C |
| Accuracy | ±3.0 from –60 to 0°C ±1.0 from 0 to 130°C ±2.0 from 130 to 250°C ±3.0 from 250 to 420°C |
| Temperature Repeatability | ±0.5°C |
| Temperature Precision | ±0.2°C |
| Sensors available: | 1 to 4 |
| Sensor Type | Fiber Optic Thermofluorescence |
| Closest to edge sensor location | 3 mm |
| Wafer Size | 100 mm to 300 mm (4 to 12 inches) |
| Wafer Materials | Silicon or ceramic |
| Immunity to RF power density | 10 W/cm2 (or higher) |
| Typical Wafer Life | At least 4 hours of bombardment at 8 W/cm2 |
| Substrate Types | Silicon, GaAs, Glass and Ceramic. Or customer supplied bare, coated, or patterned substrates |
| SensArray Datalogging Systems | APTOS 2 Fully Integrated Thermal Analysis System |
| Product | Related Processes |
| 2130 | Ansotropic Plasma Etch |
| 2140 | LPCVD/SACVD Cold Wall |
| PECVD | |
| Plasma Strip w/ Bias Potential | |
| PVD |