Optimized for deposition and high temperature etch processes, the Process Probe 2140 can perform under a very wide range of temperature conditions, from –60°C to 420°C, with full process chemistries running. The integrated sensors minimize thermal errors and improve performance near the wafer edge. The Process Probe 2140 wafer offers durability for HDP of up to 10 W/cm² power density, without degradation to the sensor assemblies. Use with the SensArray APTOS 2 data acquisition and analysis system in order to analyze valuable real time, in situ temperature data. Meet the measurement challenges you face in all your plasma etch and deposition applications with a Process Probe 2140 instrumented wafer.